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| an AMP company CW Power Transistor, 30 - 400 MHz Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios 16W PHOI 04-I 6 Absolute Maximum Ratings at 25C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation 1 JunctionTemperature Storage Temperature Thermal Resistance 1 Symbol VCES VES0 `c P* T, Ts-r0 eJC \ Rating 65 4.0 2 63 200 -4oto+125 2.1 I Units V V A W "C "C "Cl-W UNLfSS 37HERWISE NOT3 TOLERANXS ARE INCHES (F(ILLI~ETERS S.OOS =,13Hr) I Electrical Characteristics at 25C Parameter Collector-Emitter Breakdown Voltage Base-Emitter Breakdown Voltage Collector-Emitter Leakaoe Current DC Forward Current Gain Input Power Power Gain _ Coilector Efficiency Input Return Loss Load Mismatch Tolerance Symbol BV,,, BVEoO IA-c Min 65 4.0 Max - Units V V I,=5 mA, V,,=O.O V 1,=2.5 mA, I,=O.OA v-,=30 v V,,=5.0 V. I,=500 mA lest Conditions 1 mA w dB % dB - hFE PIN GP ?C 20 '9.0 40 9 ' Bo 2.0 3:l V,,=27 V, I,,=10 mA, PO,=16 W, F=400 MHz V,,=27 V, I,,=1 0 mA, POUT=1W, F=400 MHz 6 V,,=27 V, I,,=1 0 mA, P,,$6 V,,=27 V, I,=1 0 mA, Poti V,,=27 V, I,,=10 mA, P,&6 W, F=400 MHz W, F=400 MHz W, F=400 MHz RL VSWR-T Specifications Subject to Change Without Notice. |
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